u n i so n i c t e c h no l o g i e s co . , l t d u f3n25 z p ow er m o sf et www.unisonic.com.tw 1 of 3 copyright ? 20 1 3 unisonic technologies co., ltd qw - r502 - 760.d 3a , 2 50 v n - ch an n el p o we r mo s fe t ? de s cr ipt i o n t he u t c uf 3n 25 z i s an n - chan ne l en hanc em ent mode power mosfet using utc ? s advanced technology to provide c u st o mers with a minimum on - state resistance , low gate charge and s u per i or s w i t c hi n g per f or m anc e. ? f ea tu r e s * r ds ( o n) < 1. 7 @ v gs = 10v , i d = 3 a * hig h s w it c h in g spee d * t y pi c al l y 3 .2 n c l o w g at e cha rge * 100 % a val an che t es t ed ? s y mb o l 1 . gate 2 . drain 3.source to-252 1 to -251 sot -223 1 1 ? or d e r i ng i nf or m a t i on order ing number package pin assign ment pa cki n g lea d f r ee halogen free 1 2 3 uf 3n25 z l - aa 3 - r uf 3n25 z g - aa 3 - r sot - 223 g d s tape reel uf 3n 25 z l -t m3 -t uf 3n 25 z g -t m3 -t t o -251 g d s t ube uf 3n25 z l - tn3 - r uf 3n25 z g - t n3 - r t o - 252 g d s tape reel uf 3n25 z l - tn3 - t uf 3n 25 z g - tn3 - t t o - 252 g d s t ube n ot e : p i n a s s i g n m e n t: g: ga te d : d ra i n s: so u rce UF3N25Zl-aa 3 -r ( 1 ) packing type ( 2 ) package type ( 3 ) lead free ( 1 ) r: tape reel, t : tube (2) aa3: sot-223 , tm3: to-251, tn3: to-252 (3) l: lead free, g: halogen free http://
u f3n25 z p ow er mo s f et u nis o nic t e c h n ol o g i e s c o . , l t d 2 of 3 w ww . u n is on ic .c om .t w qw - r5 0 2 - 760 . d ? absolute maximum ratings parameter symbol ratings unit drain - source voltage v dss 250 v gate - source voltage v gss 20 v continuous drain current continuous i d 3 a pulsed i dm 12 a avalanche energy e as 52 mj p o w er d i s s i pat i on sot - 223 p d 0.8 w to - 251 /to - 252 1.14 w junction temperature t j +150 c storage temperature range t stg - 55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolu te maximum ratings are stress ratings only and functional device operation is not implied. ? electrical character istics parameter symbol test conditions min typ max unit off characteristics drain - source breakdown voltage bv dss i d = 25 0 a , v gs =0v 250 v dr ain - source leakage current i dss v ds = 250 v 1 a gate - source leakage current forward i gss v gs = + 20v, v ds =0v 10 a reverse v gs = - 20v, v ds =0v - 10 a on characteristics gate threshold voltage v gs (th) i d =250a 2 4 v static drain - source on - state resist ance r ds( on ) v gs =10v, i d = 3 a 1.7 dynamic parameters input capacitance c iss v gs = 0 v, v ds = 25 v , f=1mhz 190 pf output capacitance c oss 80 pf reverse transfer capacitance c rss 30 pf switching parameters total gate charge q g v dd = 50 v, i d = 3 a, i g = 100 a, v gs =10v 3.2 nc gate to sou rce charge q gs 0.64 nc gate to drain charge q gd 1.6 nc turn - o n delay time t d(on) v dd = 30 v, i d = 1 a, r g = 25 ? , v gs =0~10v 20 ns rise time t r 90 ns turn - o ff delay time t d(off) 30 ns fall - time t f 50 ns source - drain diode ratings and characte ristics maximum body - diode continuous current i s 3 a maximum body - diode pulsed current i sm 12 a drain - source diode forward voltage v sd i s = 3 a 1.3 v
u f3n25 z p ow er m o sf et u nis o nic t e c h n ol o g i e s c o . , l t d 3 of 3 w ww . u n is on ic .c om .t w qw - r5 0 2 - 760 . c ? typical characteristics drain current vs . drain-source breakdown voltage drain current , i d (a) drain- source breakdown voltage , bv dss (v) 0. 7 0 drain current vs . gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 2.1 2.8 4.2 1 . 4 3 . 5 0 50 100 150 200 250 300 0 60 180 240 300 120 0 50 100 150 200 250 300 v ds = v gs drain-source on-state resistance characteristics drain current , i d ( a ) drain to source voltage , v ds (v ) 0 0 . 2 0 . 5 0 0 . 1 0.2 0.3 0. 4 v gs = 10v 0 .1 0.3 0.4 0.6 0.6 0 drain current vs . source to drain voltage source to drain voltage, v sd (v ) drain current, i d (a) 0.2 0.4 0.6 0.8 1.0 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 0 . 5 1 . 2 ut c as sumes no responsibili t y f or equi pm ent f ai l ur es t hat r es ul t f r om us i ng pr oduc t s at v al ues t hat ex c eed, ev en m om ent ar i l y, rat ed v al ues (s uc h as m ax i m um rat i ngs , oper at i ng condi t i on ranges , or ot her par am et er s ) l i s t ed i n pr oduc t s s pec i f i cat i ons of any and al l ut c pr oduc t s des cri bed or cont ai ned her ei n. ut c pr oduc t s ar e not des i gned f or us e i n l i f e s uppor t appl i anc es , dev i ces or s ys t em s w her e m al f unc t i on of t hes e pr oduc t s can be reas onabl y ex pec t ed t o r es ul t i n per s onal i nj ur y. repr oduc t i on i n w hol e or i n par t i s pr ohi bi t ed w i t hout t he pr i or w ri t t en c ons ent of t he c opy ri ght ow ner . t he i nf or m at i on pr es ent ed i n t hi s doc um ent does not f or m par t of any quot at i on or cont r ac t , i s bel i ev ed t o be ac cur at e and r el i abl e and m ay be c hanged w i t hout not i ce.
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